Spatial carrier-carrier correlations in strain-induced quantum dots

M. Braskén, M. Lindberg, D. Sundholm, and J. Olsen
Phys. Rev. B 64, 035312 – Published 20 June 2001
PDFExport Citation

Abstract

The electron-hole correlation effects on the energy levels and the wave functions of the electrons and holes in a strain-induced quantum dot containing one to ten carrier pairs have been studied using large-scale configuration-interaction calculations. The present calculations show the formation of excitons and biexcitons in the quantum dot. By increasing the number of carrier pairs, one observes a transition from a strongly correlated system to a quantum dot system for which the electron-electron and hole-hole correlations are dominated by exchange interaction and are relatively well described at the Hartree-Fock level, while for an accurate description of the electron-hole correlations configuration-interaction calculations are necessary. Ring-shaped carrier distributions emerge with increasing number of carrier pairs.

  • Received 6 November 2000

DOI:https://doi.org/10.1103/PhysRevB.64.035312

©2001 American Physical Society

Authors & Affiliations

M. Braskén

  • Optoelectronics Laboratory, Helsinki University of Technology, FIN-02015 HUT, Finland

M. Lindberg

  • Department of Physics, Åbo Akademi University, FIN-20500 Turku, Finland

D. Sundholm

  • Department of Chemistry, University of Helsinki, FIN-00014 Helsinki, Finland

J. Olsen

  • Department of Chemistry, University of Aarhus, DK-8000 Aarhus, Denmark

References (Subscription Required)

Click to Expand
Issue

Vol. 64, Iss. 3 — 15 July 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×