Hall-conductivity sign change and fluctuations in amorphous NbxGe1x films

Nobuhito Kokubo, Jan Aarts, and Peter H. Kes
Phys. Rev. B 64, 014507 – Published 11 June 2001
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Abstract

The sign change in the Hall conductivity has been studied in thin amorphous Nb1xGex(x0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above to below the mean-field transition field Hc2) with increasing film thickness. This effect can be understood in terms of a competition between a positive-normal and a negative-fluctuation contribution to the Hall conductivity.

  • Received 8 December 2000

DOI:https://doi.org/10.1103/PhysRevB.64.014507

©2001 American Physical Society

Authors & Affiliations

Nobuhito Kokubo, Jan Aarts, and Peter H. Kes

  • Kamerlingh Onnes Laboratory, Leiden University, P. O. Box 9504, 2300 RA Leiden, The Netherlands

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Vol. 64, Iss. 1 — 1 July 2001

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