Surface-passivation-induced optical changes in Ge quantum dots

F. A. Reboredo and Alex Zunger
Phys. Rev. B 63, 235314 – Published 29 May 2001
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Abstract

One of the most interesting properties of quantum dots is the possibility to tune the band gap as a function of their size. Here we explore the possibility of changing the lifetime of the lowest-energy excited state by altering the surface passivation. We show that a moderately electronegative passivation potential can induce long-lived excitons without appreciable changes to the band gap. In addition, for such passivation the symmetry of the valence-band maximum is γ8v(t1 derived) instead of the more usual γ8v(t2 derived). This reverses the effect of the exchange interaction on the bright-dark exciton splitting.

  • Received 25 September 2000

DOI:https://doi.org/10.1103/PhysRevB.63.235314

©2001 American Physical Society

Authors & Affiliations

F. A. Reboredo* and Alex Zunger

  • National Renewable Energy Laboratory, Golden, Colorado 80401

  • *Present address: Centro Atómico Bariloche, (8400) S. C. de Bariloche, Río Negro, Argentina.

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Vol. 63, Iss. 23 — 15 June 2001

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