Abstract
We present measurements of the optical dipole of interband transitions in InAs/GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with a focus on the heavy-hole versus light-hole character of valence states.
- Received 15 January 2001
DOI:https://doi.org/10.1103/PhysRevB.63.233306
©2001 American Physical Society