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Using electronic structure changes to map the HT phase diagram of αNaV2O5

A. B. Sushkov, J. L. Musfeldt, S. A. Crooker, J. Jegoudez, and A. Revcolevschi
Phys. Rev. B 63, 220401(R) – Published 26 April 2001
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Abstract

We report polarized optical reflectance studies of αNaV2O5 as a function of temperature (4–45 K) and magnetic field (0–60 T). Rung directed electronic structure changes, as measured by near-infrared reflectance ratios ΔR(H)=R(H)/R(H=0 T), are especially sensitive to the phase boundaries. We employ these changes to map out an HT phase diagram. Topological highlights include the observation of an additional phase boundary slightly below TSG, enhanced curvature of the 34 K phase boundary above 35 T, and, surprisingly, strong hysteresis effects of both transitions with applied field.

  • Received 20 December 2000

DOI:https://doi.org/10.1103/PhysRevB.63.220401

©2001 American Physical Society

Authors & Affiliations

A. B. Sushkov and J. L. Musfeldt

  • Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996

S. A. Crooker

  • National High Magnetic Field Laboratory, MS E536, Los Alamos, New Mexico 87545

J. Jegoudez and A. Revcolevschi

  • Laboratoire de Physicochimie de l’Etat Solide, Université de Paris-Sud, Bâtiment 414, F-91405 Orsay, France

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Issue

Vol. 63, Iss. 22 — 1 June 2001

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