Spectroscopy of strain-induced quantum dots in GaAs/AlxGa1xAs quantum well structures

W. V. Schoenfeld, C. Metzner, E. Letts, and P. M. Petroff
Phys. Rev. B 63, 205319 – Published 2 May 2001
PDFExport Citation

Abstract

The lattice distortion surrounding buried self-assembled InAs stressors can create strain-induced quantum dots (SIQD’s) in a nearby GaAs/AlxGa1xAs quantum well (QW). The optical properties of these new zero-dimensional systems are studied experimentally and compared to a simple theoretical model. We demonstrate that the photoluminescence energy of the SIQD’s can be tuned in a wide energy range by the QW width as well as by the spacing between the QW and InAs quantum dot layer.

  • Received 15 December 2000

DOI:https://doi.org/10.1103/PhysRevB.63.205319

©2001 American Physical Society

Authors & Affiliations

W. V. Schoenfeld, C. Metzner, E. Letts, and P. M. Petroff

  • Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106

References (Subscription Required)

Click to Expand
Issue

Vol. 63, Iss. 20 — 15 May 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×