Blinking statistics in single semiconductor nanocrystal quantum dots

K. T. Shimizu, R. G. Neuhauser, C. A. Leatherdale, S. A. Empedocles, W. K. Woo, and M. G. Bawendi
Phys. Rev. B 63, 205316 – Published 2 May 2001
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Abstract

Statistical studies of fluorescence intermittency in single CdSe nanocrystal quantum dots (QD’s) reveal a temperature-independent power-law distribution in the histogram of on and off times—the time periods before the QD turns from emitting to nonemitting (bright to dark) and vice versa. Every QD shows a similar power-law behavior for the off-time distribution regardless of temperature, excitation intensity, surface morphology or size. We propose a dynamic model of tunneling between core and trapped charged states to explain the universal power-law statistics of the blinking events observed. The on-time probability distributions show evidence of both a tunneling mechanism similar to the off-time statistics and a secondary, photoinduced process that leads to a truncation of the power law. The same blinking statistics are also observed for single CdTe nanocrystal QD’s.

  • Received 13 February 2001

DOI:https://doi.org/10.1103/PhysRevB.63.205316

©2001 American Physical Society

Authors & Affiliations

K. T. Shimizu, R. G. Neuhauser, C. A. Leatherdale, S. A. Empedocles, W. K. Woo, and M. G. Bawendi*

  • Department of Chemistry and Center for Materials Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139

  • *Author to whom correspondence should be addressed.

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Vol. 63, Iss. 20 — 15 May 2001

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