Electronic structure of beryllium acceptors confined in GaAs/AlxGa1xAs quantum wells

Q. X. Zhao, S. Wongmanerod, M. Willander, P. O. Holtz, S. M. Wang, and M. Sadeghi
Phys. Rev. B 63, 195317 – Published 26 April 2001
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Abstract

A detailed experimental investigation is presented of beryllium acceptors confined in GaAs/AlxGa1xAs quantum well structures in the presence of an applied magnetic field. A number of features related to the transitions between the acceptor ground and excited states are reported: (1) the satellites corresponding to the 1S2S acceptor transition involving the different components [j=3/2(Γ8) and j=5/2(Γ7,8)] of the acceptor bound exciton (BE), where the labels of the exciton states are according to jj coupling theory (or the cubic crystal-field scheme); (2) the detailed splitting of the 1S3/2(Γ6)2S3/2(Γ6) acceptor transition involving the lowest acceptor BE state j=5/2(Γ7,8); and (3) a component of the 1S2P acceptor transition. In addition to this, the magnetic field dependence of these transitions is investigated experimentally, and the results are compared with theoretical predictions based on existing theory.

  • Received 5 September 2000

DOI:https://doi.org/10.1103/PhysRevB.63.195317

©2001 American Physical Society

Authors & Affiliations

Q. X. Zhao1, S. Wongmanerod2, M. Willander1, P. O. Holtz2, S. M. Wang3, and M. Sadeghi3

  • 1Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden
  • 2Department of Physics, Linköping University of Technology, S-583 81 Linköping, Sweden
  • 3Department of Microelectronics, Microwave Electronics Laboratory, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden

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Vol. 63, Iss. 19 — 15 May 2001

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