Abstract
The electron dephasing time in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modeled as two level systems. Using the standard tunneling model of glasses, we obtain a linear temperature dependence of consistent with the experimental observation. However, we find that, in order to obtain dephasing times on the order of nanoseconds, the number of two-level defects needs to be substantially larger than the typical concentration in glasses. We also find a finite system-size dependence of which can be used to probe the effectiveness of surface-aggregated defects.
- Received 8 November 2000
DOI:https://doi.org/10.1103/PhysRevB.63.195301
©2001 American Physical Society