Collective free-carrier scattering in semiconductors

G. R. M. Robb, B. W. J. McNeil, I. Galbraith, and D. A. Jaroszynski
Phys. Rev. B 63, 165208 – Published 4 April 2001
PDFExport Citation

Abstract

We present an analysis of an undoped semiconductor strongly pumped by a coherent electromagnetic radiation field. The free-carrier dynamics and the incident and scattered fields are described classically and self-consistently. The analysis predicts the existence of a collective instability which simultaneously generates a strong free-carrier grating along the propagation direction and a coherently backscattered radiation field. An example is given showing scattered intensities approaching 100% of the pump intensity. A realistic experiment to enable observation of this phenomenon is described.

  • Received 24 January 2001

DOI:https://doi.org/10.1103/PhysRevB.63.165208

©2001 American Physical Society

Authors & Affiliations

G. R. M. Robb1, B. W. J. McNeil1, I. Galbraith2, and D. A. Jaroszynski1

  • 1Department of Physics and Applied Physics, University of Strathclyde, Glasgow G4 0NG, Scotland
  • 2Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland

References (Subscription Required)

Click to Expand
Issue

Vol. 63, Iss. 16 — 15 April 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×