Combined in situ conductivity and Raman studies of rubidium doping of single-wall carbon nanotubes

N. Bendiab, L. Spina, A. Zahab, P. Poncharal, C. Marlière, J. L. Bantignies, E. Anglaret, and J. L. Sauvajol
Phys. Rev. B 63, 153407 – Published 28 March 2001
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Abstract

Phase transitions and staging in doped single-wall carbon nanotubes (SWNT’s) are controversial issues. Here, we report on combined in situ conductivity and Raman measurements of Rb-doped SWNT’s. Striking correlations between resistance, changes of resistance under laser irradiation, and frequency of the main Raman peak are observed. In the last steps of doping, two different Raman signatures, with peaks at 1596 and 1555cm1, respectively, are observed and assigned to two different stable doped phases. The two phases coexist in a specific range of doping with the latter growing progressively at the expense of the former.

  • Received 21 September 2000

DOI:https://doi.org/10.1103/PhysRevB.63.153407

©2001 American Physical Society

Authors & Affiliations

N. Bendiab1, L. Spina1, A. Zahab1, P. Poncharal1, C. Marlière2, J. L. Bantignies1, E. Anglaret1, and J. L. Sauvajol1

  • 1Groupe de Dynamique des Phases Condensées, UMR CNRS 5581, Université Montpellier II, 34095 Montpellier Cedex 5, France
  • 2Laboratoire des Verres, UMR CNRS 5587, Université Montpellier II, 34095 Montpellier Cedex 5, France

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Issue

Vol. 63, Iss. 15 — 15 April 2001

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