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Dynamic band-structure modulation of quantum wells by surface acoustic waves

T. Sogawa, P. V. Santos, S. K. Zhang, S. Eshlaghi, A. D. Wieck, and K. H. Ploog
Phys. Rev. B 63, 121307(R) – Published 7 March 2001
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Abstract

The dynamical modulation of the band structure of GaAs quantum wells by a surface acoustic wave (SAW) is investigated using photoluminescence (PL) spectroscopy. The strain field of the SAW modulates the excitonic transitions, leading to a splitting and to a polarization anisotropy of the excitonic PL lines. The oscillator strength of the split line gives direct information about the spatial distribution of carriers in the potential modulation induced by the SAW.

  • Received 13 November 2000

DOI:https://doi.org/10.1103/PhysRevB.63.121307

©2001 American Physical Society

Authors & Affiliations

T. Sogawa1,2, P. V. Santos1,*, S. K. Zhang1, S. Eshlaghi3, A. D. Wieck3, and K. H. Ploog1

  • 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
  • 2NTT Basic Research Laboratories, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • 3Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

  • *Email address: santos@pdi-berlin.de

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Vol. 63, Iss. 12 — 15 March 2001

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