Abstract
Raman scattering under hydrostatic pressure is used to investigate the phonon modes of self-organized Ge quantum dots (QD’s) grown by solid source molecular-beam epitaxy. The pressure dependence of Ge-Ge phonon and Si acoustical-overtone (2TA) modes are studied from 0 to 67 kbar at room temperature. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2TA modes occur around at ambient pressure which can be resolved at relatively low pressure of about 3 kbar. The linear pressure coefficient of Ge-Ge phonon mode in QD’s is found to be which is slightly smaller than the corresponding quantity in bulk Ge.
- Received 16 August 2000
DOI:https://doi.org/10.1103/PhysRevB.63.121306
©2001 American Physical Society