Temperature dependence of exciton linewidths in InSb quantum wells

N. Dai, F. Brown, R. E. Doezema, S. J. Chung, and M. B. Santos
Phys. Rev. B 63, 115321 – Published 2 March 2001
PDFExport Citation

Abstract

We studied the linewidths of excitons in InSb/Al0.09In0.91Sb quantum wells between 4.2 and 300 K using Fourier-transform infrared spectroscopy. Even though the exciton binding energy is only about 1 meV, the absorption is excitonic up to room temperature, due to very weak LO-phonon–electron coupling. The electron-phonon coupling constants and exciton binding energies were obtained through fitting the experimental data. We found that acoustic phonon scattering must be taken into account in fitting the experimental exciton linewidths.

  • Received 3 August 2000

DOI:https://doi.org/10.1103/PhysRevB.63.115321

©2001 American Physical Society

Authors & Affiliations

N. Dai, F. Brown, R. E. Doezema, S. J. Chung, and M. B. Santos

  • Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019

References (Subscription Required)

Click to Expand
Issue

Vol. 63, Iss. 11 — 15 March 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×