Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well

Yan Tang, Houzhi Zheng, Fuhua Yang, Pingheng Tan, Chengfang Li, and Yuexia Li
Phys. Rev. B 63, 113305 – Published 28 February 2001
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Abstract

We have studied the capacitance-voltage characteristics of an optically excited wide quantum well. Both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. This quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined Stark effect.

  • Received 7 December 2000

DOI:https://doi.org/10.1103/PhysRevB.63.113305

©2001 American Physical Society

Authors & Affiliations

Yan Tang*, Houzhi Zheng, Fuhua Yang, Pingheng Tan, Chengfang Li, and Yuexia Li

  • National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People’s Republic of China

  • *Email: ytang@red.semi.ac.cn

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Vol. 63, Iss. 11 — 15 March 2001

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