Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation

A. Hirohata, Y. B. Xu, C. M. Guertler, J. A. C. Bland, and S. N. Holmes
Phys. Rev. B 63, 104425 – Published 20 February 2001
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Abstract

Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3nmAu/5nmNi80Fe20/GaAs(100) structures with doping density in the range 1023 to 1025m3. At negative bias a helicity-dependent photocurrent dependent upon the magnetization configuration of the film and the Schottky barrier height was detected. The helicity-dependent photocurrent polarization decreases with increasing doping density and has the same variation with photon energy as found for the polarization of photoexcited electrons in GaAs. The results provide unambiguous evidence of spin-dependent electron transport through the NiFe/GaAs interface and show that the Schottky barrier height controls the spin-dependent electron current passing from the semiconductor to the ferromagnet.

  • Received 24 October 2000

DOI:https://doi.org/10.1103/PhysRevB.63.104425

©2001 American Physical Society

Authors & Affiliations

A. Hirohata, Y. B. Xu, C. M. Guertler, and J. A. C. Bland*

  • Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, England

S. N. Holmes

  • Cambridge Research Laboratory, Toshiba Research Europe Limited, 260 Cambridge Science Park, Milton Road, Cambridge CB4 0WE, England

  • *Corresponding author. Email address: jacb1@phy.cam.ac.uk

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Vol. 63, Iss. 10 — 1 March 2001

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