Intrasubband and intersubband electron relaxation in semiconductor quantum wire structures

Marcos R. S. Tavares, S. Das Sarma, and Guo-Qiang Hai
Phys. Rev. B 63, 045324 – Published 9 January 2001
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Abstract

We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from inter- and intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily responsible for intersubband (intrasubband) inelastic scattering. We identify the contributions to the inelastic-scattering rate coming from the emission of the single-particle and the collective excitations individually. We obtain the lifetime of hot electrons injected in each subband as a function of the total charge density in the wire.

  • Received 5 April 2000

DOI:https://doi.org/10.1103/PhysRevB.63.045324

©2001 American Physical Society

Authors & Affiliations

Marcos R. S. Tavares and S. Das Sarma

  • Department of Physics, University of Maryland, College Park, Maryland 20742-4111

Guo-Qiang Hai

  • Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, São Paulo 13560-970, Brazil

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Issue

Vol. 63, Iss. 4 — 15 January 2001

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