Exciton-exciton interaction in semiconductor quantum wells

A. Thilagam
Phys. Rev. B 63, 045321 – Published 9 January 2001
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Abstract

Analytical expressions of the effective exciton-exciton interaction in quantum wells are derived with a main focus on the dependence of the interactions on the quantum-well width. Any modification in the strength of the exciton-exciton interactions due to confinement is incorporated in α, a measure of dimensionality of the confined excitonic system. The flexibility of the derived expressions is shown in a systematic study of both the direct and exchange terms of the exciton-exciton interaction in CdTe/ZnxCd1xTe and GaAs/AlxGa1xAs quantum wells. Results show the appreciable sensitivity of interexcitonic interaction to α due to changes in the extension of excitonic radial distribution and strength at which local charges are neutralized, perpendicular to the direction of the growth of well layers.

  • Received 19 October 2000

DOI:https://doi.org/10.1103/PhysRevB.63.045321

©2001 American Physical Society

Authors & Affiliations

A. Thilagam*

  • Faculty of Science, Northern Territory University, Northern Territory 0909, Australia

  • *Permanent address: Dr. A. Thilagam, c/o Dr. M. A. Lohe, The University of Adelaide, Department of Physics and Mathematical Physics, South Australia 5005, Australia, Email address: tlohe@hotmail.com

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Issue

Vol. 63, Iss. 4 — 15 January 2001

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