Collective excitations in symmetric p-type GaAs/AlxGa1xAs quantum wells

Shun-Jen Cheng and Rolf R. Gerhardts
Phys. Rev. B 63, 035314 – Published 2 January 2001
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Abstract

We present a calculation of the collective plasmon excitations in p-type GaAs/AlxGa1xAs quantum wells that is based on the random-phase approximation and, within the kp model takes exactly into account band-structure effects and the strong dependence of the subband wave functions on the in-plane wave vector. For symmetrically modulation-doped wells, the subband structure in the Hartree approximation, plasmon dispersions, single-particle excitations, and energy-loss spectra at zero temperature are consistently calculated. In contrast to the corresponding n-type quantum wells, a multisubband approximation yields a strong coupling of the intra- and intersubband plasmons, even in symmetrical wells, and predicts the existence of an additional intersubband plasmon at finite wave vectors. These drastic differences between electron and hole quantum wells are attributed to the finite overlap between eigenfunctions belonging to different subbands and different in-plane wave vectors, which exists in hole but not in electron systems.

  • Received 28 September 2000

DOI:https://doi.org/10.1103/PhysRevB.63.035314

©2001 American Physical Society

Authors & Affiliations

Shun-Jen Cheng and Rolf R. Gerhardts

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany

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Issue

Vol. 63, Iss. 3 — 15 January 2001

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