Intersection and anticrossing of far-infrared modes in elliptical quantum dots with tunable ellipticity

M. Hochgräfe, Ch. Heyn, and D. Heitmann
Phys. Rev. B 63, 035303 – Published 22 December 2000
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Abstract

We have investigated elliptically shaped quantum dots in modulation-doped AlxGa1xAsGaAs heterostructures with far-infrared spectroscopy. We observe series of modes ω+i and ωi which increase in frequency with increasing mode index i. The frequencies ω+i and ωi at a given i represent, at a magnetic field B=0, oscillations along the short and long axes of the dot, respectively. With a gate voltage we can vary the ellipticity of the dot; in particular, we can tune the ω2 mode through the ω+1 mode. This leads to an interesting mode intersection and, at B>0, to an anticrossing behavior.

  • Received 27 June 2000

DOI:https://doi.org/10.1103/PhysRevB.63.035303

©2000 American Physical Society

Authors & Affiliations

M. Hochgräfe, Ch. Heyn, and D. Heitmann

  • Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany

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Vol. 63, Iss. 3 — 15 January 2001

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