Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots

V. Yam, Vinh Le Thanh, Y. Zheng, P. Boucaud, and D. Bouchier
Phys. Rev. B 63, 033313 – Published 2 January 2001
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Abstract

This work presents a study on the effect of a bimodal size distribution and of the pyramid/dome transition to the optical properties of self-assembled Ge/Si quantum dots. The wetting layers are shown to be inhomogeneous in thickness due to lateral diffusion of Ge from two-dimensional (2D) layers towards islands of bimodal sizes, while the island-related photoluminescence remains unchanged. The results indicate that three-dimensional islands, at their early stages of nucleation, are formed by consuming Ge from 2D layers and that the island luminescence energies are more sensitive to Ge/Si interdiffusion than the confinement effect inside the islands as currently believed.

  • Received 28 July 2000

DOI:https://doi.org/10.1103/PhysRevB.63.033313

©2001 American Physical Society

Authors & Affiliations

V. Yam1, Vinh Le Thanh1,*, Y. Zheng2, P. Boucaud1, and D. Bouchier1

  • 1Institut d’Électronique Fondamentale, UMR-CNRS 8622, Bâtiment 220, Université Paris-Sud, 91405 Orsay Cedex, France
  • 2Laboratoire Minéralogie-Cristallographie, URA-CNRS 09, Université Paris VI, 4-Place Jussieu, 75252 Paris Cedex 5, France

  • *Author to whom correspondence should be addressed. Email: lethanh@ief.u-psud.fr

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Vol. 63, Iss. 3 — 15 January 2001

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