Experimental evidence for a stable GaAs surface near (113)

L. Geelhaar, J. Márquez, and K. Jacobi
Phys. Rev. B 62, 6908 – Published 15 September 2000
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Abstract

GaAs surfaces vicinal to (113) with a continuous range of misorientation angles up to 11.5° in all azimuthal directions were created by grinding a spherical depression into (113) oriented samples. Thin homoepitaxial layers were grown onto these samples by molecular beam epitaxy (MBE), and the surfaces were in situ studied by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The surface quality in the depression was verified by reproducing LEED patterns of the (113) and (114) surfaces. A stable GaAs surface was found that is oriented from (113) by 9°±2° towards [11¯0]. STM and LEED images of this surface are presented.

  • Received 8 February 2000

DOI:https://doi.org/10.1103/PhysRevB.62.6908

©2000 American Physical Society

Authors & Affiliations

L. Geelhaar, J. Márquez, and K. Jacobi*

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, D-14195 Berlin, Germany

  • *Corresponding author. Electronic address: jacobi@fhi-berlin.mpg.de

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Issue

Vol. 62, Iss. 11 — 15 September 2000

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