Fano resonances in electronic transport through a single-electron transistor

J. Göres, D. Goldhaber-Gordon, S. Heemeyer, M. A. Kastner, Hadas Shtrikman, D. Mahalu, and U. Meirav
Phys. Rev. B 62, 2188 – Published 15 July 2000
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Abstract

We have observed asymmetric Fano resonances in the conductance of a single-electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of single-electron addition to the confined droplet within the transistor, but the origin of the nonresonant path is unclear. A feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.

  • Received 27 December 1999

DOI:https://doi.org/10.1103/PhysRevB.62.2188

©2000 American Physical Society

Authors & Affiliations

J. Göres*, D. Goldhaber-Gordon, S. Heemeyer, and M. A. Kastner

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Hadas Shtrikman, D. Mahalu, and U. Meirav

  • Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot, Israel 76100

  • *Present address: Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany.
  • Present address: Harvard University, Department of Physics and Society of Fellows, 17 Oxford Street, Cambridge MA 02138.
  • Electronic address: mkastner@mit.edu

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Vol. 62, Iss. 3 — 15 July 2000

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