Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field

V. K. Dugaev; V. I. Litvinov; W. Dobrowolski

doi:10.1103/PhysRevB.62.1905

Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field

V. K. Dugaev, V. I. Litvinov, and W. Dobrowolski

Phys. Rev. B 62, 1905 – Published 15 July 2000

Abstract

An analytical approach is developed for the energy levels in Group-IV–VI narrow-gap semiconductor quantum wells in a parallel magnetic field. Asymptotic closed-form expressions are obtained. Numerical calculations are done for the energy spectrum of the EuS/PbS/EuS quantum well in the magnetic field of an arbitrary strength. The effect of an anisotropy of the electron valleys is also discussed.

Received 19 January 2000

DOI:https://doi.org/10.1103/PhysRevB.62.1905

Authors & Affiliations

V. K. Dugaev and V. I. Litvinov^*

Chernovtsy Branch of the Institute of Materials Science Problems, National Academy of Sciences of Ukraine, I. Vilde 5, 58001 Chernovtsy, Ukraine

W. Dobrowolski

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

^*Present address: Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208.

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Vol. 62, Iss. 3 — 15 July 2000

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