Theory of magnetophonon resonance in quantum wells

V. V. Afonin, V. L. Gurevich, and R. Laiho
Phys. Rev. B 62, 15913 – Published 15 December 2000
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Abstract

In a polar semiconductor mixed optic phonon-magnetoplasmon vibrations can be trapped within a quantum well. Such localized vibrations effectively interact with the confined electrons of the quantum well. We demonstrate that these excitations can be responsible for the magnetophonon resonance oscillation of the conductivity of quantum wells, i.e., phonon-induced resonant transitions of electrons between the Landau levels. The frequency of the mixed vibrations is shifted, due to the screening effects, towards the frequency of transverse optic vibrations ωt. This can explain the observed shift of the magnetophonon resonance in quantum wells. We give theoretical considerations to determine a (rather narrow) interval of electron concentrations where a two-dimensional magnetophonon resonance is observable.

  • Received 21 March 2000

DOI:https://doi.org/10.1103/PhysRevB.62.15913

©2000 American Physical Society

Authors & Affiliations

V. V. Afonin and V. L. Gurevich

  • Wihuri Physical Laboratory, Department of Physics, University of Turku, FIN-20014 Turku, Finland
  • and Solid State Physics Division, A. F. Ioffe Institute, 194021 Saint Petersburg, Russia

R. Laiho

  • Wihuri Physical Laboratory, Department of Physics, University of Turku, FIN-20014 Turku, Finland

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Vol. 62, Iss. 23 — 15 December 2000

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