Excitonic photoluminescence quenching by impact ionization of excitons and donors in $\mathrm{GaAs}/{\mathrm{Al}}_{0.35}{\mathrm{Ga}}_{0.65}\mathrm{As}$ quantum wells with an in-plane electric field

We present a detailed experimental study on photoluminescence quenching due to exciton and donor impact ionization by accelerated electrons under an in-plane nanosecond duration electric field created in $\mathrm{GaAs}/{\mathrm{Al}}_{0.35}{\mathrm{Ga}}_{0.65}\mathrm{As}$ quantum wells. From the photoluminescence transients measured by the time-correlated single-photon counting technique, we have determined the experimental conditions under which donor impact ionization can have an influence on quenching of the excitonic photoluminescence. The coefficient of two-dimensional exciton impact ionization has been estimated; its dependences on the applied electric field, lattice temperature, and width of the quantum wells are given.