Effects of surface roughness and alloy disorder on the density of states in semiconductor quantum wires

Doan Nhat Quang and Nguyen Huyen Tung
Phys. Rev. B 62, 15337 – Published 15 December 2000
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Abstract

We calculate the effects of surface roughness and alloy disorder on the density of states (DOS) in cylindrical semiconductor quantum wires with inclusion of a Hubbard local-field correction. It is found that the disorder-induced DOS tail becomes much larger and much more extended below the subband edge when reducing the wire size. Further, the DOS tail at low energies may be enhanced by the Hubbard correction by up to several orders of magnitude. A possibility of applying our results to describe the observed inhomogeneous broadening of exciton lines in the absorption and emission spectra of quantum wires is discussed.

  • Received 15 June 2000

DOI:https://doi.org/10.1103/PhysRevB.62.15337

©2000 American Physical Society

Authors & Affiliations

Doan Nhat Quang

  • Center for Theoretical Physics, National Center for Natural Science and Technology, P.O. Box 429 Boho, Hanoi 10000, Vietnam

Nguyen Huyen Tung

  • Institute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

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Vol. 62, Iss. 23 — 15 December 2000

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