High electric field transport in ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ quantum wells under nonquantizing magnetic fields at low temperatures

Hall mobility, magnetoresistance coefficient, and Hall-to-drift mobility ratio of two-dimensional hot electrons in ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ square quantum wells are calculated for classical magnetic fields for lattice temperatures in the range 4–15 K considering the degeneracy of the distribution function and incorporating screened deformation-potential acoustic, ionized impurity, and alloy disorder scattering. The variations of the galvanomagnetic coefficients with the channel width, the lattice temperature, and the electric and magnetic fields are studied. The magnetoresistance is found to change more remarkably than the Hall mobility or the Hall ratio with changes in the lattice temperature, the channel width, and the electric and magnetic fields.