Abstract
We investigate carrier dynamics in optically excited n-i-n GaAs/(AlGa)As resonant tunneling diodes that incorporate a single layer of InAs quantum dots in the center of the GaAs quantum well (QW). Voltage-tunable resonant changes in the dot luminescence are observed and are discussed in terms of the tunneling of carriers into the resonant states of the QW and of the capture of carriers from the QW into the dots.
- Received 23 July 1999
DOI:https://doi.org/10.1103/PhysRevB.62.13595
©2000 American Physical Society