Magnetoresistance of a domain wall at a submicron junction

A local magnetoresistance (MR) effect associated with the switching of a coherent spin block confined in a cross-shaped junction of mesoscopic ferromagnetic NiFe wires was probed with the voltage pads attached close (<1.5 μm) to the junction. A positive intrinsic MR effect, i.e., an increase in resistance, associated with local spin noncollinearity, or a 45° domain wall, in a 0.5 μm cross was demonstrated while the anisotropic MR and the Lorentz MR were unambiguously excluded.