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Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions

V. I. Klimov, A. A. Mikhailovsky, D. W. McBranch, C. A. Leatherdale, and M. G. Bawendi
Phys. Rev. B 61, R13349(R) – Published 15 May 2000
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Abstract

To evaluate the role of nonphonon energy relaxation mechanisms in quantum dots and in particular the role of electron-hole (e-h) interactions, we have studied femtosecond carrier dynamics in CdSe colloidal nanoparticles in which the e-h separation (coupling) is controlled using different types of surface ligands. In dots capped with hole accepting molecules, the e-h coupling is strongly reduced after the hole is transferred to a capping group. By re-exciting an electron within the conduction band at different stages of hole transfer and monitoring its relaxation back into the ground state, we observe a more than tenfold increase in the electron relaxation time (from 250 fs to 3 ps) after the completion of the hole transfer to the capping molecule. This strongly indicates that electron relaxation in quantum dots is dominated not by phonon emission but by the e-h energy transfer.

  • Received 25 February 2000

DOI:https://doi.org/10.1103/PhysRevB.61.R13349

©2000 American Physical Society

Authors & Affiliations

V. I. Klimov*, A. A. Mikhailovsky, and D. W. McBranch

  • Chemical Science and Technology Division, CST-6, MS-J585, Los Alamos National Laboratory, Los Alamos, New Mexico 87545

C. A. Leatherdale and M. G. Bawendi

  • Department of Chemistry and Center for Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139

  • *Author to whom correspondence should be addressed. Electronic address: klimov@lanl.gov

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Vol. 61, Iss. 20 — 15 May 2000

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