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Phonon-assisted biexciton generation in a single quantum dot

F. Findeis, A. Zrenner, G. Böhm, and G. Abstreiter
Phys. Rev. B 61, R10579(R) – Published 15 April 2000
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Abstract

Phonon-assisted absorption of a single InGaAs/GaAs quantum dot is investigated by multichannel photoluminescence excitation spectroscopy as a function of magnetic field. GaAs LO phonon-assisted generation of exciton and biexciton states is observed. Magnetic field induced detuning of the resonance conditions results in a twofold diagonal splitting of the exciton and a symmetric fourfold splitting of the biexciton resonances. Those findings are explained in terms of sequential phonon-assisted biexciton generation followed by sequential biexciton decay.

  • Received 2 November 1999

DOI:https://doi.org/10.1103/PhysRevB.61.R10579

©2000 American Physical Society

Authors & Affiliations

F. Findeis*, A. Zrenner, G. Böhm, and G. Abstreiter

  • Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany

  • *Author to whom correspondence should be addressed. FAX: +49-289-320-6620. Electronic address: findeis@wsi.tum.de

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Vol. 61, Iss. 16 — 15 April 2000

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