Spin-transport dynamics of optically spin-polarized electrons in GaAs quantum wires

T. Sogawa, H. Ando, and S. Ando
Phys. Rev. B 61, 5535 – Published 15 February 2000
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Abstract

We investigate the drift and diffusion dynamics of optically spin-polarized electrons in p-type rectangular GaAs/AlAs quantum wires with small (10 nm) lateral sizes by time- and spatially resolved photoluminescence measurement. The drift process causes a rapid expansion of the spin-polarized electrons, keeping the spin polarization beyond by 10 μm. We theoretically analyze the transport characteristics of spin-polarized electrons and their spin-relaxation dynamics based on a drift-diffusion model which includes a spin-flip process. Experiment can be consistently explained by considering that the dependence of the diffusivity and mobility on the degree of the spin polarization, demonstrating the possibility of spin-dependent electron-electron scattering that affects the transport properties in one-dimensional structures.

  • Received 2 August 1999

DOI:https://doi.org/10.1103/PhysRevB.61.5535

©2000 American Physical Society

Authors & Affiliations

T. Sogawa*, H. Ando, and S. Ando

  • NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198 Japan

  • *FAX: +81-46-270-2342. Electronic address: sogawa@will.brl.ntt.co.jp

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Issue

Vol. 61, Iss. 8 — 15 February 2000

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