Effect of photogenerated holes on capacitance-voltage measurements in InAs/GaAs self-assembled quantum dots

In this paper, we investigate the effects of the illumination on the capacitance-voltage measurements of a semiconductor structure where three planes containing InAs/GaAs self-assembled quantum dots were embedded. Nonexpected features of the capacitance attributed to the photogenerated holes accumulation in the quantum dots were observed. Contrary to the capacitance caused by electrons, the one associated with holes was found to be strongly dependent on the frequency, showing slower response of holes.