Valence-band states in diluted magnetic semiconductor quantum wires

F. V. Kyrychenko and J. Kossut
Phys. Rev. B 61, 4449 – Published 15 February 2000
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Abstract

We present a theoretical study of the valence-band states in diluted magnetic semiconductor quantum wire structures. As a consequence of confinement in two directions, the hole states in a quantum wire are known to be mixtures of heavy- and light-hole components. Due to a strong p-d exchange interaction in diluted magnetic semiconductors, the relative contribution of these components is strongly affected by an external magnetic field B, a feature that is absent in nonmagnetic quantum wires. This leads, in turn, to a strong magnetic-field dependence of the probabilities of various optical dipole transitions in diluted magnetic semiconductor quantum wires. Numerical calculations performed for the case of Cd1xMnxTe/Cd1xyMnxMgyTe T-shaped quantum wires demonstrate the possibility to efficiently control the polarization characteristics of light emitted from such structrures by means of an external magnetic field B.

  • Received 30 June 1999

DOI:https://doi.org/10.1103/PhysRevB.61.4449

©2000 American Physical Society

Authors & Affiliations

F. V. Kyrychenko and J. Kossut

  • Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

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Issue

Vol. 61, Iss. 7 — 15 February 2000

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