Electronic structure of Cu1xNixRh2S4 and CuRh2Se4: Band-structure calculations, x-ray photoemission, and fluorescence measurements

G. L. W. Hart, W. E. Pickett, E. Z. Kurmaev, D. Hartmann, M. Neumann, A. Moewes, D. L. Ederer, R. Endoh, K. Taniguchi, and S. Nagata
Phys. Rev. B 61, 4230 – Published 1 February 2000
PDFExport Citation

Abstract

The electronic structure of spinel-type Cu1xNixRh2S4 (x=0.0, 0.1, 0.3, 0.5, 1.0) and CuRh2Se4 compounds has been studied by means of x-ray photoelectron (XPS) and fluorescent spectroscopy. Cu L3, Ni L3, S L2,3, and Se M2,3 x-ray emission spectra (XES) were measured near thresholds at Beamline 8.0 of the Lawrence Berkeley Laboratory’s Advanced Light Source. XES measurements of the constituent atoms of these compounds, reduced to the same binding energy scale, are found to be in excellent agreement with XPS valence bands. The calculated XES spectra which include dipole matrix elements show that the partial density of states reproduce experimental spectra quite well. States near the Fermi level (EF) have strong Rh d and S(Se) p character in all compounds. In NiRh2S4 the Ni 3d states contribute strongly at EF, whereas in both Cu compounds the Cu 3d bands are only 1 eV wide and centered 2.5 eV below EF, leaving very little 3d character at EF. The density of states at the Fermi level is less in NiRh2S4 than in CuRh2S4. This difference may contribute to the observed decrease, as a function of Ni concentration, in the superconducting transition temperature in Cu1xNixRh2S4. The density of states of the ordered alloy Cu0.5Ni0.5Rh2S4 shows behavior that is more “split-band”-like than “rigid-band”-like.

  • Received 17 June 1999

DOI:https://doi.org/10.1103/PhysRevB.61.4230

©2000 American Physical Society

Authors & Affiliations

G. L. W. Hart* and W. E. Pickett

  • Department of Physics, University of California, Davis, California 95616-8677

E. Z. Kurmaev

  • Institute of Metal Physics, Russian Academy of Sciences–Ural Division, 620219 Yekaterinburg GSP-170, Russia

D. Hartmann and M. Neumann

  • Department of Physics, University of Osnabrück, Osnabrück D-49069, Germany

A. Moewes

  • Center for Advanced Microstructures and Devices, Louisiana State University, Baton Rouge, Louisiana 70803

D. L. Ederer

  • Department of Physics, Tulane University, New Orleans, Louisiana 70118

R. Endoh, K. Taniguchi, and S. Nagata

  • Department of Materials Science and Engineering, Muroran Institute of Technology, Muroran 050-8585, Japan

  • *Present address: National Renewable Energy Laboratory, Golden, CO 80401. Electronic address: ghart@nrel.gov

References (Subscription Required)

Click to Expand
Issue

Vol. 61, Iss. 6 — 1 February 2000

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×