Three-band excitonic Rabi oscillations in semiconductor quantum wells

R. Binder and M. Lindberg
Phys. Rev. B 61, 2830 – Published 15 January 2000
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Abstract

Optical Rabi oscillations in atomic two-level systems and excitonic Rabi oscillations in two-band semiconductors are already well established. In contrast to two-level (or two-band) Rabi oscillations, three-level (or three-band) Rabi oscillations offer a rich variety of oscillation dynamics involving both radiative and nonradiative (Raman) transitions. We analyze excitonic three-band Rabi oscillations in semiconductor quantum wells and study, in particular, the role of band-coupling effects and Coulomb effects.

  • Received 16 September 1999

DOI:https://doi.org/10.1103/PhysRevB.61.2830

©2000 American Physical Society

Authors & Affiliations

R. Binder

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

M. Lindberg

  • Institutionen för Fysik, Åbo Akademi, Porthansgatan 3, 20500 Åbo, Finland

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Vol. 61, Iss. 4 — 15 January 2000

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