Role of defects in two-dimensional phase transitions: An STM study of the Sn/Ge(111) system

A. V. Melechko, J. Braun, H. H. Weitering, and E. W. Plummer
Phys. Rev. B 61, 2235 – Published 15 January 2000
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Abstract

The influence of Ge substitutional defects and vacancies on the (3×3)(3×3) charge-density wave phase transition in the α phase of Sn on Ge(111) has been studied using a variable-temperature scanning tunneling microscope. Above 105 K, Ge substitutional defects stabilize regions with (3×3) symmetry that grow with decreasing temperature and can be described by a superposition of exponentially damped waves. At low temperatures, T<~105K defect-defect density-wave-mediated interactions force an alignment of the defects onto a honeycomb sublattice that supports the low-temperature (3×3) phase. This defect-mediated phase transition is completely reversible. The length scales involved in this defect-defect interaction dictate the domain size (104Å2).

  • Received 16 July 1999

DOI:https://doi.org/10.1103/PhysRevB.61.2235

©2000 American Physical Society

Authors & Affiliations

A. V. Melechko, J. Braun, H. H. Weitering, and E. W. Plummer

  • Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996
  • Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

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Vol. 61, Iss. 3 — 15 January 2000

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