Intrinsic quantum dots in partially ordered bulk (GaIn)P

U. Kops, P. G. Blome, M. Wenderoth, R. G. Ulbrich, C. Geng, and F. Scholz
Phys. Rev. B 61, 1992 – Published 15 January 2000
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Abstract

We present a photoluminescence study with 500 nm lateral resolution on partially ordered bulk (GaIn)P alloys at lattice temperatures 3–60 K, external magnetic fields 0–12 T, and excitation power 0.1–100 μW. In the known ordering-induced low energy emission band we resolve narrow optical transition lines with 0.3–1.0 meV width. They show no thermal broadening, a diamagnetic shift with pronounced anisotropy, and biexcitonic states. We demonstrate that the transitions are connected with intrinsic quasi-zero-dimensional electron-hole confinement formed at the antiphase-boundaries in the crystal.

  • Received 8 February 1999

DOI:https://doi.org/10.1103/PhysRevB.61.1992

©2000 American Physical Society

Authors & Affiliations

U. Kops, P. G. Blome, M. Wenderoth, and R. G. Ulbrich

  • IV. Physikalisches Institut, Universität Göttingen, Bunsenstrasse 13, D-37073 Göttingen, Germany

C. Geng and F. Scholz

  • 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany

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Vol. 61, Iss. 3 — 15 January 2000

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