Stoichiometry and adhesion of Nb/Al2O3

W. Zhang and J. R. Smith
Phys. Rev. B 61, 16883 – Published 15 June 2000
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Abstract

We examine the relative stability of both stoichiometric and nonstoichiometric Nb/Al2O3 interfaces and Al2O3 surfaces. Results of first-principles computations of surface and interfacial atomic relaxations, electron-density distributions, and total energies are presented. We found that while the Al-terminated Al2O3(0001) surface is stable relative to the O-terminated surface, interface formation with Nb can reverse the stability, depending on the oxygen partial pressure. This interfacial structure is consistent with recent experimental results. Finally, we computed some of the energetics associated with the diffusion of Al into Nb across the Nb/Al2O3 interface. Our results are consistent with Al migration into the Nb at temperatures of the order of 103K, as reported experimentally.

  • Received 14 February 2000

DOI:https://doi.org/10.1103/PhysRevB.61.16883

©2000 American Physical Society

Authors & Affiliations

W. Zhang

  • Princeton Materials Institute, Princeton University, Princeton, New Jersey 08540

J. R. Smith

  • Delphi Research Labs, Warren, Michigan 48090

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Vol. 61, Iss. 24 — 15 June 2000

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