Abstract
We study, both experimentally and theoretically, the influence of polarization-induced electric fields on the optical properties of heavily doped multiple-quantum-well structures. To investigate the impact of the strain state on the transition energy, these heterostructures are deposited on either a GaN or an (Al,Ga)N relaxed buffer layer. Furthermore, we show that the recombination dynamics in these heavily doped multiple quantum wells is still controlled by residual electric fields, contrary to the common assumption that flatband conditions are established at this doping level.
- Received 21 October 1999
DOI:https://doi.org/10.1103/PhysRevB.61.16025
©2000 American Physical Society