Thermoelectric properties of n-type PbTe/Pb1xEuxTe quantum wells

A. Casian, I. Sur, H. Scherrer, and Z. Dashevsky
Phys. Rev. B 61, 15965 – Published 15 June 2000
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Abstract

A systematic theoretical analysis of electronic states and thermoelectric transport in PbTe/Pb1xEuxTe quantum well structures is presented, employing more realistic well model than has been used up to now. The carrier scattering both on optical and acoustical phonons is considered. The kinetic equations are solved using the variational method and taking into account the intersubband transitions. The electrical conductivity, thermopower (Seebeck coefficient) and thermoelectric power factor as functions of the well width are studied for quantum well (QW) structures with (100) and (111) crystallographic orientations and different carrier densities. It is found that the power factor is greater in (100) QW’s, but the more realistic the well model is the lower the power factor. The dependencies of the power factor on the carrier density are determined and analyzed. It is shown that when the potential barrier height grows but the carrier density remains constant, the power factor is decreased. However the latter may be increased by increasing the permissible carrier density. So the expected values of the power factor for QW’s with U=250meV, d=20Å, and n=5×1019cm3 are 175μWcm1K2 in the case of (100) orientation and 108μWcm1K2 for the (111) one. The comparison with the results of recent experiments is also presented.

  • Received 20 January 2000

DOI:https://doi.org/10.1103/PhysRevB.61.15965

©2000 American Physical Society

Authors & Affiliations

A. Casian and I. Sur

  • Department of Informatics, Computers and Microelectronics, Technical University of Moldova, MD-2004, Chişinău, Moldova

H. Scherrer

  • Laboratoire de Physique des Materiaux, Ecole des Mines, Parc de Saurupt, F-54042 Nancy, France

Z. Dashevsky

  • Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel

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Vol. 61, Iss. 23 — 15 June 2000

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