Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

H. Rho, Howard E. Jackson, S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. B 61, 15641 – Published 15 June 2000
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Abstract

We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at 221cm1 as well as an interface phonon at 245cm1. We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.

  • Received 13 December 1999

DOI:https://doi.org/10.1103/PhysRevB.61.15641

©2000 American Physical Society

Authors & Affiliations

H. Rho and Howard E. Jackson

  • Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011

S. Lee, M. Dobrowolska, and J. K. Furdyna

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

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Vol. 61, Iss. 23 — 15 June 2000

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