Excitons and charged excitons in semiconductor quantum wells

C. Riva, F. M. Peeters, and K. Varga
Phys. Rev. B 61, 13873 – Published 15 May 2000; Erratum Phys. Rev. B 64, 089902 (2001)
PDFExport Citation

Abstract

A variational calculation of the ground-state energy of neutral excitons and of positively and negatively charged excitons (trions) confined in a single-quantum well is presented. We study the dependence of the correlation energy and of the binding energy on the well width and on the hole mass. The conditional probability distribution for positively and negatively charged excitons is obtained, providing information on the correlation and the charge distribution in the system. A comparison is made with available experimental data on trion binding energies in GaAs-, ZnSe-, and CdTe-based quantum well structures, which indicates that trions become localized with decreasing quantum well width.

  • Received 15 December 1999

DOI:https://doi.org/10.1103/PhysRevB.61.13873

©2000 American Physical Society

Erratum

Authors & Affiliations

C. Riva* and F. M. Peeters

  • Departement Natuurkunde, Universiteit Antwerpen (UIA), B-2610 Antwerpen, Belgium

K. Varga

  • Physics Department, Argonne National Laboratories, Argonne, Illinois 60439

  • *Electronic address: riva@uia.ua.ac.be
  • Electronic address: peeters@uia.ua.ac.be

References (Subscription Required)

Click to Expand
Issue

Vol. 61, Iss. 20 — 15 May 2000

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×