Spin relaxation in semiconductor quantum dots

Alexander V. Khaetskii and Yuli V. Nazarov
Phys. Rev. B 61, 12639 – Published 15 May 2000
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Abstract

We have studied spin-flip processes in GaAs electron quantum dots that accompany transitions between different discrete energy levels. Several different mechanisms that originate from spin-orbit coupling are shown to be responsible for such processes. We have evaluated the rates for all mechanisms with and without a magnetic field. We have shown that the spin relaxation of the electrons localized in the dots differs strikingly from that of the delocalized electrons. The most effective spin-flip mechanisms related to the absence of the inversion symmetry appear to be strongly suppressed for localized electrons. This results in unusually low spin-flip rates.

  • Received 1 September 1999

DOI:https://doi.org/10.1103/PhysRevB.61.12639

©2000 American Physical Society

Authors & Affiliations

Alexander V. Khaetskii* and Yuli V. Nazarov

  • Faculty of Applied Sciences and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

  • *Permanent address: Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia.

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Issue

Vol. 61, Iss. 19 — 15 May 2000

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