Intragap states in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">SmB</mi></mrow><mrow><mn>6</mn></mrow></msub></mrow></math></span>

N. E. Sluchanko; V. V. Ġlushkov; B. P. Gorshunov; S. V. Demishev; M. V. Kondrin; A. A. Pronin; A. A. Volkov; A. K. Savchenko; G. Grüner; Y. Bruynseraede; V. V. Moshchalkov; S. Kunii

doi:10.1103/PhysRevB.61.9906

Intragap states in ${SmB}_{6}$

N. E. Sluchanko, V. V. Ġlushkov, B. P. Gorshunov, S. V. Demishev, M. V. Kondrin, A. A. Pronin, A. A. Volkov, A. K. Savchenko, G. Grüner, Y. Bruynseraede, V. V. Moshchalkov, and S. Kunii

Phys. Rev. B 61, 9906 – Published 15 April 2000

Abstract

The results of wide-range measurements of the low-frequency, rf, and microwave conductivity in the typical mixed-valent narrow-gap semiconductor samarium hexaboride are presented. The established steplike anomaly of conductivity σ(ν) around 10 GHz is discussed in the framework of the exciton-polaron approach and coherent-state formation in ${SmB}_{6}$ at helium temperatures. A combined analysis of the dc- and wide-range ac-transport characteristics and dielectric permittivity data at low temperatures is developed.