Excited states and selection rules in self-assembled InAs/GaAs quantum dots

I. E. Itskevich; M. S. Skolnick; D. J. Mowbray; I. A. Trojan; S. G. Lyapin; L. R. Wilson; M. J. Steer; M. Hopkinson; L. Eaves; P. C. Main

doi:10.1103/PhysRevB.60.R2185

Rapid Communication

Excited states and selection rules in self-assembled InAs/GaAs quantum dots

I. E. Itskevich, M. S. Skolnick, D. J. Mowbray, I. A. Trojan, S. G. Lyapin, L. R. Wilson, M. J. Steer, M. Hopkinson, L. Eaves, and P. C. Main

Phys. Rev. B 60, R2185(R) – Published 15 July 1999

Abstract

High-pumping-intensity photoluminescence (PL) studies of InAs self-assembled quantum dots (SAQD) have been performed under high pressure P up to 70 kbar. The origin of the higher-energy PL lines that appear in the spectra with increasing pumping intensity is determined by using the $Γ - X$ crossover effect in the conduction band. With increasing P, these lines are sequentially quenched at particular values of P. From this we unambiguously conclude that the lines correspond to the transitions from different excited conduction electron states in the SAQD. This indicates the existence of strong selection rules for the electron-hole recombination in the SAQD.

Received 21 May 1999

DOI:https://doi.org/10.1103/PhysRevB.60.R2185

Authors & Affiliations

I. E. Itskevich^*

Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia

M. S. Skolnick and D. J. Mowbray

Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom

I. A. Trojan

Institute of High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow district, 142092, Russia

S. G. Lyapin

Institute of High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow district, 142092, Russia
Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom

L. R. Wilson and M. J. Steer