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Intraband relaxation in CdSe quantum dots

Philippe Guyot-Sionnest, Moonsub Shim, Chris Matranga, and Margaret Hines
Phys. Rev. B 60, R2181(R) – Published 15 July 1999
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Abstract

The relaxation of the 1P to 1S electronic states of CdSe semiconductor nanocrystals is followed by infrared pump-probe spectroscopy. Fast (1 ps) and slow (>200 ps) components are observed. Using different capping molecules to control the hole states, we show how the intraband relaxation slows down as the hole is in a shallow trap, a deep trap, or a charge-separated complex, providing strong support for an electron-hole Auger coupling. The slow component corresponds to an energy relaxation rate orders of magnitude slower than in bulk systems. It may be the first indication of the phonon bottleneck effect long expected in strongly confined quantum dots.

  • Received 1 December 1998

DOI:https://doi.org/10.1103/PhysRevB.60.R2181

©1999 American Physical Society

Authors & Affiliations

Philippe Guyot-Sionnest, Moonsub Shim, Chris Matranga, and Margaret Hines*

  • James Franck Institute, The University of Chicago, 5640 South Ellis Avenue, Chicago, Illinois 60637

  • *Present address: Revlon, Research Center, 2121 Route 27, Edison, NJ 08818.

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Vol. 60, Iss. 4 — 15 July 1999

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