• Rapid Communication

Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps

S. A. Crooker, D. G. Rickel, S. K. Lyo, N. Samarth, and D. D. Awschalom
Phys. Rev. B 60, R2173(R) – Published 15 July 1999
PDFExport Citation

Abstract

Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of steplike reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd, Mn)Se quantum wells between 0 and 60 T. This disorder, measured through the linewidth of low-temperature photoluminescence spectra, drops abruptly at ∼19, 36, and 53 T, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.

  • Received 17 March 1999

DOI:https://doi.org/10.1103/PhysRevB.60.R2173

©1999 American Physical Society

Authors & Affiliations

S. A. Crooker and D. G. Rickel

  • National High Magnetic Field Laboratory, MS E536, Los Alamos, New Mexico 87545

S. K. Lyo

  • Sandia National Laboratory, P.O. Box 5800, MS-1415, Albuquerque, New Mexico 87185

N. Samarth

  • Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802

D. D. Awschalom

  • Department of Physics, University of California, Santa Barbara, California 93106

References (Subscription Required)

Click to Expand
Issue

Vol. 60, Iss. 4 — 15 July 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×