Charged excitonic complexes in GaAs/Al0.35Ga0.65As p-i-n double quantum wells

V. B. Timofeev, A. V. Larionov, M. Grassi Alessi, M. Capizzi, A. Frova, and J. M. Hvam
Phys. Rev. B 60, 8897 – Published 15 September 1999
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Abstract

Photoluminescence (PL) and PL excitation measurements (PLE) have been performed in GaAs/AlxGa1xAs double quantum well (QW) structures under different applied electric fields. An emission due to charged excitons (trions) has been identified in the PL spectra 3 meV below the heavy-hole exciton emission. These trions are localized by random potential fluctuations, at the interfaces or in the QW, as shown by the saturation of their emission intensity with respect to that of the heavy-hole excitons. Trions are positively charged, namely, they are made by two holes and one electron, as shown by (i) an analysis of the PL polarization for resonant excitation of the heavy- and the light-exciton ground state, and (ii) the analysis of the Zeeman effect for the trion PL band in the Faraday geometry, i.e., for a magnetic field normal to the QW’s.

  • Received 7 May 1999

DOI:https://doi.org/10.1103/PhysRevB.60.8897

©1999 American Physical Society

Authors & Affiliations

V. B. Timofeev and A. V. Larionov

  • Institute of Solid State Physics, Russian Academy of Science, 142432 Chernogolovka, Russia

M. Grassi Alessi, M. Capizzi, and A. Frova

  • Istituto Nazionale di Fisica della Materia, Università degli Studi di Roma “La Sapienza,” Piazzale Aldo Moro 2, 00185 Roma, Italy

J. M. Hvam

  • Research Center COM, The Technical University of Denmark, DK 2800 Lyngby, Denmark

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Vol. 60, Iss. 12 — 15 September 1999

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